•Dual gantry & dual bond head design achieves a max. throughput of 6,000 CPH (at ±10 μm) and 5,000 CPH (at ±5 μm), delivering industry-leading flip chip production efficiency among its class.
•Not only possess the characteristics of ±5 μm @ 3σ XY placement accuracy and ±0.07° @ 3σ angular accuracy, but also equipped with thermal deformation compensation and automatic calibration.
•Covers a wide range of processes including flip-chip flux dipping, eutectic bonding, and pre-sintering. Compatible with various chip carriers such as 8/12-inch wafers and waffle packs.
•Supports one-key switching between face-up and flip chip bonding, compatible with PVRMS and PVMS processes and equipped with dual dispensing heads, allowing quick switching between direct and parallel modes.
•Accommodates a wide range of chip sizes from 0.5 mm to 50 mm, with flexible force control from 10 to 5000 gf (±2 gf in accuracy), effectively preventing ultra-thin chip breakage and ensuring stable yields in multi-layer stacking.
•Supports automatic wafer loading, waffle pack tray exchange, and integrated flux dipping, minimizing manual intervention and suitable for high-volume production lines.
Applications:
6 Key Application Sectors:
Advanced Semiconductor Packaging;
High-end Consumer Electronics;
AI Computing chips;
5G Communications;
Automotive Electronics;
Memory Chip Manufacturing.
Capabilities & Features
| Item | FCB9900FC |
| XY Bonding Accuracy (With Calibration Substrate) | +5um@30 |
| Rotary Accuracy (With Calibration Substrate) | +0.07°@3σ |
| Bondhead Rotation Angle | 0-360° |
| CPH Efficiency Value | MAX4000 |
| Supported Chip Size (mm) | 0.2-50mm |
| Supported Substrate Size (mm) | 325*203mm |
| Bondforce Range | Optional: 10–1000 gf, 50–5000 gf |
| Supported Substrate Type | Strips、Boats、Panels |
| Supported Chip Type | 8''/12'' Wafer ring、Waffle pack、Tray |
| Working Pressure | 220V 50/60Hz |
| Equipment Weight | 2000kg |
| Power | 220V 50/60 Hz/2.5kVA |
| Working Environment | 23±3℃/40%~60% RH |
FAQ:
Q: Can the max. throughput be stably achieved in production?
A: 1. Without flux dipping: ±10 μm → 6,000 CPH, ±5 μm → 5,000 CPH, stable in mass production.
2.With flux dipping: ±10 μm → approx. 4,500 CPH, ±5 μm → approx. 3,900 CPH.
Q: Which flip chip processes are supported?
A: Flip chip reflow soldering, eutectic bonding, pre-sintering, compatible with various chip carriers, including 8/12-inch wafers and waffle pack.
Q: Is the ±5μm accuracy stable over the long term?
A: Absolutely. XY ±5μm @ 3σ, angular ±0.07° @ 3σ, with thermal compensation and automatic calibration – zero drift during long-term production.