•Fully Automatic Loading: It supports Tray / Tape & Reel feeding for re-inspection and automatic change for 6"/8"/12" wafer rings.
•Independent Dual-Die Parallel Testing：It enables in-line anomaly detection, greatly improves equipment throughput, and reduces manual intervention and operational risks.
•Wide Test CoverageI：t provides static test up to 3.6kV / 600A, dynamic test up to 2kV / 1500A, and reliability test with UIS up to 2.5kV and SC max. 3000A.
•Precise Temperature Control:It delivers a temperature range from room temperature to 200°C, ±2°C temperature stability and 0.1°C resolution.
•Full-Cycle Wafer Map and Real-Time Yield Traceability:It supports remote data monitoring and full lifecycle traceability of production data.
•Inert Gas Protection:It eliminates arcing between electrodes during high-voltage testing and protects dies and probes.
Applications
Third-generation semiconductors (SiC/GaN), power electronics, automotive electronics, optical communications, memory chips, advanced packaging (SiP/2.5D/3D).
Supported Products:
Power devices (MOSFET/IGBT), SiC/GaN bare dies, memory chips (Flash/LPDDR), optical chips, RF chips, automotive-grade logic chips.
Capabilities & Features
| Item | Technical Parameter |
|---|
| Compatible Component | SiC / IGBT Power Bare Dies |
| Loading Carrier | 6/8/12-Inch Wafer Ring, Taped & Reel, and Customized Tray |
| Unloading Carrier | Standard: 6/8-Inch Wafer Rings |
| Die Size | 3mm × 3mm - 9mm × 9mm |
| Die Thickness | 100um ~ 600um |
| Index Time | < 700ms (in Parallel with Testing) |
| Main Test Items | Dynamic / Static / UIS / SC, etc. |
| Test Environment | High Temperature / Room Temperature |
| Temperature Range | Room Temp. ~ 200°C |
| Temperature Stability | ±2°C, with resolution of 0.1°C |
| Product Protection | Nitrogen |
| Placement Accuracy | ±25um@3σ |
| Placement Angle | ±0.5°@3σ |
| Top / Bottom-Side Inspection | Inspection Accuracy >10μm, Detectable when Contrast > 40; Defect Types: Scratches, Contamination, Foreign Particles, Burn Marks, Corner / Edge Chipping, etc. |
| Side Surface Inspection | Inspection Accuracy >20μm, Detectable when Contrast > 40; Defect Types: Corner / Edge Chipping, Pits |
| Operation Stability | MTBF > 168h, MTBA > 2h |
FAQ:
Q: Supports SiC/GaN high voltage & high temperature testing?
A: Rated for 3000V and 200°C, suitable for automotive-grade tests of third-gen semiconductors.
Q: What is the difference from conventional sorters?
A: Our SC900A performs full KGD testing on bare dies (including electrical test + visual inspection + high-temperature) to eliminate potential defects before packaging, while conventional sorters only conduct sorting after packaging.
Q: Supports high-volume wafer-level production?
A: Absolutely, it is compatible with 8"/12" wafers and quite suitable for mass production with fully automatic operation and 4000 UPH efficiency.
